-40%
2N5630 Si NPN High-power Transistor 120V 200W new mfr Solid State 1 pc lot
$ 4.22
- Description
- Size Guide
Description
2N5630 Si NPN High-power Transistor 120V 200WMaterial of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 200
Maximum collector-base voltage |Ucb|, V: 120
Maximum collector-emitter voltage |Uce|, V: 120
Maximum emitter-base voltage |Ueb|, V: 7
Maximum collector current |Ic max|, A: 20
Maximum junction temperature (Tj), °C: 200
Transition frequency (ft), MHz: 1
Collector capacitance (Cc), pF: 500
Forward current transfer ratio (hFE), min: 20
Package of 2N5630 transistor: TO3
MFR: Solid State Inc.
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