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IRF640 IRF640N Power MOSFET N-Channel 18A 200V

IRF640 IRF640N Power MOSFET N-Channel 18A 200V

$ 2.77

Availability: 98 in stock
  • Condition: New
  • Restocking Fee: No
  • Maximum Collector-Base Voltage: 200 V
  • Number of Pins: 3
  • Transistor Category: Power Transistor
  • Packaging: Bag
  • Collector-Emitter Voltage: 18 V
  • All returns accepted: Returns Accepted
  • Maximum DC Collector Current: 18 A
  • Package/Case: TO-220
  • Number of Elements per Chip: 1
  • Configuration: Single
  • Brand: International Rectifier
  • Refund will be given as: Money Back
  • Mounting Style: Through-Hole
  • Return shipping will be paid by: Buyer
  • Series: IRF
  • MPN: IRF640N
  • Type: N-Channel Enhancement Mode MOSFET
  • Item must be returned within: 30 Days

    Description

    IRF640 IRF640N Power MOSFET N-Channel 18A 200V
    IRF640 is a power MOSFET of the N- channel enhancement mode silicon gate power field effect transistor.
    Manufacturer: IR
    Manufacturer Part No: IRF640N
    Package / Case: TO-220
    RoHS: Yes
    Details
    Application
    Designed for low voltage, high speed power switching applications such as Switching Regulators converters, uninterruptible power supply, dc/dc converters for telecom, industrial, and lighting equipment, solenoid and Relay Drivers.  It is generally fancied every commercial-industrial purposes at power dissipation levels to roughly about 50 Watts.
    IRF640 power MOSFETs are particularly made for purposes like relay drivers, switching convertors, switching regulators, motor drivers and high power bipolar switching transistors drivers that need high speed and low gate drive power.
    Specifications and features of IRF640
    Description
    IRF640 is a power MOSFET of the N- channel enhancement mode silicon gate power field effect transistor. It is made using the strip layout-based mesh overlay process. This is a technology that complements and enhances the performances than other standard devices. It simplifies assembly and reduces the risk of accidental short circuit in crowded monitor Printed Circuit Boards’.
    Specifications and features of
    IRF640
    IRF640 has dynamic dV/dt rating
    The repetitive avalanche rated drain-source voltage V
    DS
    200 Volts
    It is easy to parallel
    It has simple drive prerequisites
    Gate-to-Source Voltage, max: ±20 Volts
    It has a 70nC total gate charge
    It has a 125W power dissipation
    It has a rating of continuous drain current of 18 Ampere, and drain-to-source breakdown voltage 200 Volts
    The maximum drain-source on-state resistance, rDS(ON) is 0.18 Ohm
    The IC is single pulse avalanche energy rated
    Safe operating area is power dissipation limited
    It has high speed of switching. These are actually in nanosecond
    It has linear transfer properties
    The IRF640 has high input impedance
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