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NXP RF Power LDMOS Transistor MRF1K50HR5 1500 W 1.8-500 MHz 50 V Geniune

NXP RF Power LDMOS Transistor MRF1K50HR5 1500 W 1.8-500 MHz 50 V Geniune

$ 73.92

Availability: 40 in stock
  • Maximum Operating Frequency: 8500 MHz
  • Item must be returned within: 30 Days
  • Maximum Power Dissipation: 8 W
  • Maximum Collector-Emitter Saturation Voltage: 1.0 V
  • Restocking Fee: No
  • Return shipping will be paid by: Buyer
  • Maximum Base-Emitter Voltage: -8 V
  • All returns accepted: Returns Accepted
  • Refund will be given as: Money Back
  • Condition: New
  • Transistor Category: Power Transistor
  • Brand: NXP
  • Collector-Emitter Voltage: -50 V, 50 V

    Description

    NXP RF Power LDMOS Transistor MRF1K50HR5 1500 W 1.8-500 MHz 50 V Geniune
    Manufacturer: NXP
    Product Category: RF MOSFET Transistors
    RoHS:  Details
    Transistor Polarity: N-Channel
    Technology: Si
    Id - Continuous Drain Current: 2.4 A
    Vds - Drain-Source Breakdown Voltage: - 500 mV, 135 V
    Operating Frequency: 1.8 MHz to 500 MHz
    Gain: 23.7 dB
    Output Power: 1.5 kW
    Minimum Operating Temperature: - 40 C
    Maximum Operating Temperature: + 150 C
    Mounting Style: SMD/SMT
    Package/Case: NI-1230H-4S
    Configuration: Dual
    Series: MRF1K50H
    Type: RF Power MOSFET
    Brand: NXP Semiconductors
    Forward Transconductance - Min: 33.5 S
    Number of Channels: 2 Channel
    Pd - Power Dissipation: 1.667 kW
    Product Type: RF MOSFET Transistors
    Factory Pack Quantity: 50
    Subcategory: MOSFETs
    Vgs - Gate-Source Voltage: - 6 V, 10 V
    Vgs th - Gate-Source Threshold Voltage: 2.2 V
    Part # Aliases: 935313284178
    Unit Weight: 0,001 mg